[en] The dominant divacancies, distributions of H atoms and displaced Si_D atom-type defects related radiation damage center in metal-insulator-semiconductor (MIS) ρ-type Si were mainly studied. Two ''hole traps'' and new Dit (interface states density) introduced by 2.0 MeV, 3 x 10¹²-3 x 10¹⁴H⁺-ions cm^-2, at room temperature implantation, were also investigated in detail by using DLTS (Deep Level Transient Spectroscopy) technique. One of traps at E_v + E_τ = E_v + 0.18 eV (σ_p = 2.8 x 10^-16 cm²) is assigned as the divacancy [V₂], and the other at E_v + E(τ) = E_v + 0.36eV (σ_p = 3.3 x 10^-17 cm²) is assigned as the combination of the [SiH-V_F] complex and displaced Si_D. It was found that the concentration of these defects is correlated to the total dose implanted into MIS. (author)