[en] Epitaxial CoSi₂ layers have been fabricated by implanting 200 keV cobalt ions into single crystal silicon substrates. The experimental results after implantation are in close agreement with those obtained from computer simulations using single crystal targets. The as implanted structures for the lower doses are silicon rich and consist of a mixture of A- and B-type CoSi₂ precipitates interwoven by silicon. For the medium doses an epitaxial layer of CoSi₂ is formed with any excess cobalt being incorporated in small CoSi inclusions, at the peak of the inmplanted distribution. For the highest doses preferential sputtering of silicon at the surface of the silicide causes this region to become increasingly rich in cobalt. To accommodate this cobalt excess, grains of CoSi form above the epitaxial CoSi₂ layer. As the dose is increased the crystallinity of the synthesised layer improves and there is a corresponding decrease in resistivity, after which any further increase in dose causes the crystallinity to deteriorate again and the resistivity to increase. For all doses, furnace annealing (at 1000^oC, 30 min) causes a decrease in resistivity and a corresponding improvement in crystallinity as the ratio of Co: Si approaches the value for the stoichiometric compound (CoSi₂). After rapid thermal annealing (RTA) at 1000^oC for 5s, the resistivity and crystal quality of the synthesised layer for the medium dose specimen are close to those achieved by conventional furnace annealing. (author)