[en] This paper reports on a four-stage shift register fabricated using Nb/Al-Al₂O₃/Nb Josephson junctions, Mo resistors, Nb transmission lines, and SiO₂ insulating layers. The circuit had 36 junctions (5 μm, 1000 A/cm³) and 61 resistors (1.2 ohms/square), with a minimum feature size of 2 μm. An eight-mask process was used in the fabrication. All material layers were deposited by sputtering. Patterning for all but one of the masking levels was done by lift-off using image reversal lithography in most cases. Lift-off avoided many of the problems common to reactive ion etching (RIE), including the need for etch stops, non-uniformity in etching, and the formation of organic residue (polymer) on the wafer