[en] This paper reports on a Josephson binary counter with nondestructive readout implemented and tested in both niobium and niobium nitride technology. Successful operation of the Nb version has been observed. The design incorporates an additional tapered edge SiO₂ level in the Nb processing sequence, which increases interferometer inductance, decreases capacitance, and ensures that geometric resonances are as high in frequency as possible. This new level has the added advantage of providing mask compatibility with the NbN process, as this level is skipped in the NbN flow, thereby compensating in part for the larger penetration depth of NbN. The counter cell is designed to be as compact as possible to minimize stray inductance and maximize top count rate and high count rate bias margins low read SQUID inductance, and requires no holes in the ground plane