[en] The defect-production and annealing processes in InAs under 2.0/14.5 MeV electron irradiation up to a dose 7x10¹⁸ electrons/cm² at 77 and 293 K have been investigated. It was shown that in undoped n- InAs crystals the n-value increase with irradiation dose at 293 K leads to the dependence Δn∼φ^0.5 at all fluences. On the contrary, in the case of irradiation of n- InAs crystals doped with Sn and Te (n>5x10¹⁷) it was found that the n-value begins to increase after ''exhaustion'' of the doping atoms only as a result of the RD- doping atom interaction. From optical free-carrier absorption measurements a decrease power index r in the dependence α∼ω^-r is observed as a result of irradiation that was explained by the influence of local deformation fields in the vicinity of the RD on the scattering mechanisms. 13 refs.; 10 figs.; 2 tables. (author)