Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.016 seconds
Macrander, A.T.; Khounsary, A.M.; Graham, M.
Argonne National Lab., IL (United States). Funding organisation: USDOE, Washington, DC (United States)1992
Argonne National Lab., IL (United States). Funding organisation: USDOE, Washington, DC (United States)1992
AbstractAbstract
[en] Thermal distortions of an inclined silicon crystal subjected to the high heat loads expected for a 2.5 m long undulator at the Advanced Photon Source were simulated, and the distortions were then used to calculate (111),(111) (+,-) double crystal rocking curves. The inclination angle for all the simulations was either 80 degree or 85 degree. The first crystal was assumed to be a slab that was uniformly cooled on its underside with liquid gallium. For some of the simulations, the undulator gap was set to 11.5 mm corresponding to K=2.2, and the crystals were oriented to diffract the first harmonic energy at 4.2 keV. For K=2.2, the total x-ray power incident on the crystal is 3.8 kW , and the peak power density transverse to the beam is 148 W/mm2. Rocking curve broadening in these cases was found to be no more than 0.42 arcsec. Simulations for the third harmonic at K=2.2 were also performed, and the broadening was found to be no more than 1.87 arcsec. In other simulations the undulator gap was widened, and rocking curves for the third harmonic at K=1.5 (19.9 key) and the first harmonic at K=1.2 (8.2 keV) were obtained. Only weak broadening was found for these cases as well. Finally, rocking curves at 4.2 keV were not altered if a slit that passed only the central cone of the undulator was placed in front of the first crystal
Original Title
Undulator at Advanced Photon Source
Primary Subject
Source
Sep 1992; 13 p; Society of Photo-Optical Instrumentation Engineers (SPIE) international symposium on optical applied science and engineering; San Diego, CA (United States); 19-24 Jul 1992; CONF-920792--34; CONTRACT W-31109-ENG-38; OSTI as DE93000506; NTIS; INIS; US Govt. Printing Office Dep
Record Type
Report
Literature Type
Conference
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue