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Asoka-Kumar, P.; Au, H.L.; Lynn, K.G.; Sferlazzo, P.
Brookhaven National Lab., Upton, NY (United States). Funding organisation: USDOE, Washington, DC (United States)1992
Brookhaven National Lab., Upton, NY (United States). Funding organisation: USDOE, Washington, DC (United States)1992
AbstractAbstract
[en] High-energy ion implantation (above 200 keV) is now commonly used in a variety of VLSI processes. The high energy required for these implants is often achieved by implanting multiply charged ions, which inevitably brings in the problem of low-energy ion contamination. The low-energy contamination is difficult to diagnose and detect. Positron annihilation spectroscopy is used to examine the defect distributions in these high energy implants with varying degrees of contamination
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1992; 19 p; 9. international conference on ion implantation technology; Gainesville, FL (United States); 21-24 Sep 1992; CONF-9209245--2; CONTRACT AC02-76CH00016; OSTI as DE93004907; NTIS; INIS; US Govt. Printing Office Dep
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