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Corbel, C.; Leberre, C.; Hautojarvi, P.; Saarinen, K.; Liszkay, L.
Institut National des Sciences et Techniques Nucleaires (INSTN), Centre d'Etudes de Saclay, 91 - Gif-sur-Yvette (France)1991
Institut National des Sciences et Techniques Nucleaires (INSTN), Centre d'Etudes de Saclay, 91 - Gif-sur-Yvette (France)1991
AbstractAbstract
[en] Photoquenching of the EL2 defects in semi-insulating GaAs increases positron trapping at vacancies. This is associated to a metastable vacancy having the following properties: it recovers as the metastable state of EL2, its concentration correlates with that of EL2, and its charge is negative. We conclude that the metastable vacancy is involved in the atomic configuration of the metastable state of the EL2 defect
Source
1991; 5 p; 16. International Conference on Defects in Semiconductors; Bethlehem, PA (United States); 22-26 Jul 1991
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