Effect of defect formation in implanted silicon on the lifetime of nonequilibrium carriers

Alekseev, A.E.; Beletskij, G.V.; Sarapin, Ya.N.; Fedchuk, A.P.; Tsybanev, N.N.

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Effect of defect formation in implanted silicon on the lifetime of nonequilibrium carriers

Alekseev, A.E.; Beletskij, G.V.; Sarapin, Ya.N.; Fedchuk, A.P.; Tsybanev, N.N.1992

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AbstractAbstract

[en] A quantitative interconnection between the dose of n-Si monocrystal ion doping, the lifetime of nonequilibrium current carriers and the deficiency level of the presurface destroyed layer is ascertained according to Frenkel pairs. The method of the surface photo-emf can be applied for the conducting of accurate quantitative measurement of minor doses of implanted ions

Original Title

Vliyanie defektoobrazovaniya v implantirovannom kremnii na vremya zhizni neravnovesnykh nositelej

Primary Subject

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY (G6300)

Record Type

Journal Article

Journal

Pis'ma v Zhurnal Tekhnicheskoj Fiziki; ISSN 0320-0116;

; CODEN PZTFDD; v. 18(11); p. 59-62

Country of publication

Russian Federation

Descriptors (DEI)

BORON IONS, CARRIER LIFETIME, FRENKEL DEFECTS, ION IMPLANTATION, KEV RANGE 10-100, MONOCRYSTALS, N-TYPE CONDUCTORS, PLATES, RADIATION DOSES, RANGE, SILICON

Descriptors (DEC)

CHARGED PARTICLES, CRYSTAL DEFECTS, CRYSTAL STRUCTURE, CRYSTALS, ELEMENTS, ENERGY RANGE, IONS, KEV RANGE, LIFETIME, MATERIALS, POINT DEFECTS, SEMICONDUCTOR MATERIALS, SEMIMETALS, VACANCIES

LanguageLanguage

Russian

Reference NumberReference Number

24060588

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