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AbstractAbstract
[en] Luminescent properties of diodes obtained using B ion implantation in p-CdxHg1-xTe with x=038 are studied. Comparison analysis of luminescence spectra at injection and photo excitation is carried out. The range of reduced concentration of uncompensated acceptors formed during implantation is determined to affect essentially processes of radiative recombination of nonequilibrium carriers
Original Title
Lyuminestsentsiya implantirovannykh sloev Cd0.38Hg0.62Te i diodnykh struktur na ikh osnove
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Journal Article
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