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Girka, A.I.; Kosyak, S.V.; Kuts, V.I.; Tartachnik, V.P.; Tychina, I.I.
Radiation materials science. V. 91990
Radiation materials science. V. 91990
AbstractAbstract
[en] The near edge band absorption and positron annihilation (lifetime τ) in α-particle (E=35 MeV, Φ=1017-1018cm-2) irradiated cadmium diphosphide single crystals were researched. Defected destructure of near edge band absorption contacts with rise of state density tails in bandgap of the semiconductor. Multiplicity of annealing stages caused by large number of radiation violation types in crystal with compound lattice. The main annealing stage (200-3000C) caused by compound vacancy defects destruction; the vacancy voids disappear at T>3500C. 11 refs.; 3 figs. (author)
Original Title
Izuchenie strukturnykh nesovershenstv v obluchennom difosfide kadmiya
Source
Zelenskij, V.F. (ed.); AN Ukrainskoj SSR, Kharkov (Ukraine). Fiziko-Tekhnicheskij Inst; 225 p; 1990; p. 147-153; International conference on radiation materials science; Mezhdunarodnaya konferentsiya po radiatsionnomu materialovedeniyu; Alushta (Ukraine); 22-25 May 1990
Record Type
Report
Literature Type
Conference
Report Number
Country of publication
ANTILEPTONS, ANTIMATTER, ANTIPARTICLES, BEAMS, CADMIUM COMPOUNDS, CRYSTAL DEFECTS, CRYSTAL STRUCTURE, CRYSTALS, DISLOCATIONS, ELECTRICAL PROPERTIES, ELEMENTARY PARTICLES, ENERGY RANGE, FERMIONS, HARDNESS, HEAT TREATMENTS, HELIUM 4 BEAMS, INTERACTIONS, ION BEAMS, LEPTONS, LINE DEFECTS, MATTER, MECHANICAL PROPERTIES, MEV RANGE, PARTICLE INTERACTIONS, PHOSPHIDES, PHOSPHORUS COMPOUNDS, PHYSICAL PROPERTIES, PNICTIDES, POINT DEFECTS, RADIATION EFFECTS, SPECTRA
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