[en] Thin Zr-N films have been prepared by reactive RF magnetron sputtering. The nitrogen partial pressure and the RF power are chosen as sputtering parameters. The relationships between film properties, such as composition, structure, optical and electrical properties, and these sputtering parameters is systematically investigated. The relationships between the nitrogen pressure and the RF power for each property of Zr-N films in the sputtering process are also discussed. It is found that the film properties can be widely changed by controlling RF power as well as nitrogen pressure. A semiconductorlike Zr-N film is obtained with sputtering in the high-nitrogen-pressure region. The conductance of the semiconductorlike Zr-N films changes with temperature, conforming to a function of exp (E/kT) in the temperature range from 200degC to 550degC, which applicable to a thermistor. (author)