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[en] The anisotropic etching of (100) oriented silicon wafers with 34% KOH in the temperature range 35-60 Centigrade degrees was investigated. The etch rate of silicon in {100} and {111} crystallographic direction as well as the etch rate of thermally grown SiO2 is determined. It was found that the angle between the (111) walls of the etched grooves and the surface (100) plane can be different from the theoretically calculated value 57.74 degrees. (Author)
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