[en] A new type of self-trapped charge-carrier state in antiferromagnetic (AFM) semiconductors, which can be realized in materials with high Neel points, is proposed. The carrier produces a microscopic normally unstable AFM region, in which it is trapped. Its energy in this region is lower than in the stable one. An additional energy gain is produced by the canting of the moments of the sublattices in the carrier trapping region. Self-trapped carriers can become paired to form zero-spin complexes that can lead to high-temperature superconductivity of degenerate semiconductors. Calculation of the self-trapping of carriers in a chessboard-order antiferromagnetic within regions with layered AFM ordering show that this trapping can take place even far from the boundary of these two phases. The possibility of self-trapping of carriers at T = 0 in a spin-fluid microregion is discussed. 14 refs