[en] Using Doppler broadening annihilation spectroscopy, we investigated the properties of irradiated samples of SiO₂/Si(100) with 117 nm thick oxide layer, grown in dry O₂ on p- and n-type substrates. These samples were irradiated with γ rays and x rays at doses in the range of 7x10⁴--9x10⁶ rad and 50--2000 mJ/cm², respectively. The changes observed in the Doppler broadening line shape parameter after irradiation and its recovery during isochronal annealing were used to obtain an activation energy of 1.48--1.61 eV required for annealing the defects