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AbstractAbstract
[en] The mechanism is explained of a discovered effect of accelerated formation of divacancies with the center ionization energies of EV+0,37 eV in a dislocational neutron-doped silicon in comparison with dislocationless one
Original Title
K voprosu o radiatsionnom defektoobrazovanii v nejtronno-legirovannom kremnii
Record Type
Journal Article
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