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[en] The influence of an electric field on the formation of radiation-induced defects in silicon irradiated respectively with γ-ray, electrons and neutrons has been investigated using the DLTS method. It is found that the application of an electric field across the p-n junction during irradiation can reduce the formation efficiency of A-centers, divacancies and E3 (Ec-0.37 eV) defects, and that the concentration of radiation defects in the junction depletion region is lower than that in the quasineutral bulk. The formation characteristics of radiation defects in the depletion region could be related mainly to the transformation of the charge states of the defects caused by the electric field
Source
Nastasi, M. (ed.) (Los Alamos National Lab., NM (United States)); Harriott, L.R. (ed.) (AT and T Labs., Murray Hill, NJ (United States)); Herbots, N. (ed.) (Arizona State Univ., Tempe, AZ (United States)); Averback, R.S. (ed.) (Univ. of Illinois, Urbana, IL (United States)); 932 p; ISBN 1-55899-174-3; 
; 1993; p. 117-122; Materials Research Society; Pittsburgh, PA (United States); 16. Materials Research Society (MRS) fall meeting; Boston, MA (United States); 30 Nov - 5 Dec 1992; Materials Research Society, 9800 McKnight Road, Pittsburgh, PA 15237 (United States)
; 1993; p. 117-122; Materials Research Society; Pittsburgh, PA (United States); 16. Materials Research Society (MRS) fall meeting; Boston, MA (United States); 30 Nov - 5 Dec 1992; Materials Research Society, 9800 McKnight Road, Pittsburgh, PA 15237 (United States)