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[en] The incorporation of Er into LiNbO3 is of great interest for fabricating waveguide lasers and amplifiers. The authors compare Er diffusion data with the results of Er implantation, performed at 3.6 MeV energy. Even after annealing for 4h at 1,060 C, the resulting Er profiles display very good matching to the optical modes. The results of a theoretical gain estimate are presented
Source
Nastasi, M. (ed.) (Los Alamos National Lab., NM (United States)); Harriott, L.R. (ed.) (AT and T Labs., Murray Hill, NJ (United States)); Herbots, N. (ed.) (Arizona State Univ., Tempe, AZ (United States)); Averback, R.S. (ed.) (Univ. of Illinois, Urbana, IL (United States)); 932 p; ISBN 1-55899-174-3; 
; 1993; p. 279-284; Materials Research Society; Pittsburgh, PA (United States); 16. Materials Research Society (MRS) fall meeting; Boston, MA (United States); 30 Nov - 5 Dec 1992; Materials Research Society, 9800 McKnight Road, Pittsburgh, PA 15237 (United States)
; 1993; p. 279-284; Materials Research Society; Pittsburgh, PA (United States); 16. Materials Research Society (MRS) fall meeting; Boston, MA (United States); 30 Nov - 5 Dec 1992; Materials Research Society, 9800 McKnight Road, Pittsburgh, PA 15237 (United States)