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[en] Novel gas microstrip detectors based on a layer of hydrogenated amorphous silicon (a-Si:H) have been built. Energy resolutions of 18% FWHM and gains of 1500 were measured with 5.9 keV X-rays from an 55Fe source. An attempt is made to understand the variations in gain and energy resolution observed as a function of various applied voltages and time. The effect of the backplane voltage on the electric field in the anode region is discussed by analogy with MOSFETs having a geometry similar to that of our detectors. (orig.)
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002; 
; CODEN NIMAER; v. 337(2-3); p. 387-393
; CODEN NIMAER; v. 337(2-3); p. 387-393