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Kraner, H.W.; Li, Z.; Lazanu, S.; Biggeri, U.; Borchi, E.; Bruzzi, M.
Brookhaven National Lab., Upton, NY (United States). Funding organisation: USDOE, Washington, DC (United States)1993
Brookhaven National Lab., Upton, NY (United States). Funding organisation: USDOE, Washington, DC (United States)1993
AbstractAbstract
[en] The energy levels induced by fast neutron irradiation in high energy silicon detectors produced by different oxidations are analyzed, utilizing TSC measurements and a method of deconvolution of the compound experimental spectrum. Conclusions are drawn regarding the influence of the temperature and ambient during oxidation on their radiation hardness
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Dec 1993; 9 p; 1. international conference on large scale applications and radiation hardness of semiconductor detectors; Florence (Italy); 7-9 Jul 1993; CONF-9307163--4; CONTRACT AC02-76CH00016; Also available from OSTI as DE95002466; NTIS; US Govt. Printing Office Dep
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