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Radeka, V.; Citterio, M.; Rescia, S.; Manfredi, P.F.; Speziali, V.
Brookhaven National Lab., Upton, NY (United States). Funding organisation: USDOE, Washington, DC (United States)1994
Brookhaven National Lab., Upton, NY (United States). Funding organisation: USDOE, Washington, DC (United States)1994
AbstractAbstract
[en] Development of low noise preamplifters for large ionization chambers with liquid argon (LAr) and liquid krypton (LKr) used in high energy physics experiments for measurement of energy of charged particles and photons requires die choice of a technology able to withstand the environment: a temperature of 90 K -120 K; an ionizing radiation dose of 1-2 Mrad; a neutron fluence of 0.5 -1.1014n/cm2. Silicon JFETs by virtue of their reliable noise behavior and their intrinsic radiation hardness appear to be very suitable devices for applications both at room and cryogenic temperatures. We describe the noise properties of JFET devices and a monolithic preamplifier suitable for amplification of charge and current signals
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Dec 1994; 3 p; Low temperature electronics and high temperature superconductivity conference; Reno, NV (United States); 21-26 May 1995; CONF-9505163--1; CONTRACT AC02-76CH00016; Also available from OSTI as DE95007303; NTIS; US Govt. Printing Office Dep
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