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Akedo, K.; Hirai, N.; Takaoka, G.H.; Yamada, Isao
Annual report of Radiation Laboratory Department of Nuclear Engineering Faculty of Engineering, Kyoto University1993
Annual report of Radiation Laboratory Department of Nuclear Engineering Faculty of Engineering, Kyoto University1993
AbstractAbstract
[en] In order to obtain epitaxial Al-Al2O3 multi-layer devices, it is necessary to deposit epitaxially Al on Al2O3 and Al2O3 on Al. We have already obtained an epitaxial Al2O3 film on Al/Si (111). In this paper, we have grown Al films on sapphire (0001) substrates, and investigated the crystallinity by using RBS, RHEED, and X-ray diffraction measurements. (author)
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Kyoto Univ. (Japan). Faculty of Engineering; 156 p; Jul 1993; p. 106-108
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