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Kanazawa, Satoshi; Kanno, Ikuo; Kimura, Itsuro; Ichihara, Chihiro; Hayashi, S.A.
Annual report of Radiation Laboratory Department of Nuclear Engineering Faculty of Engineering, Kyoto University1993
Annual report of Radiation Laboratory Department of Nuclear Engineering Faculty of Engineering, Kyoto University1993
AbstractAbstract
[en] The recombination effect in the residual defect of a silicon surface barrier detector was investigated for low energy heavy ions (below 0.2 MeV/amu). The recombination effect had -1/2 power dependence on the electric field strength. It was also found that the plasma column with higher electron-hole density had less recombination effect, contrary to the case of high energy heavy ions (above 1 MeV/amu). (author)
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Kyoto Univ. (Japan). Faculty of Engineering; 156 p; Jul 1993; p. 36-37
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