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Kotera, N.; Tanaka, K.; Jones, E.D.
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE Office of Energy Research, Washington, DC (United States)1997
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE Office of Energy Research, Washington, DC (United States)1997
AbstractAbstract
[en] Two-dimensional natures of energy-band and the effective mass of conduction subband in narrow InGaAs/InAlAs quantum well layers have been clarified via magneto-photoluminescence, cyclotron resonance, Shubnikov-de Haas oscillations and quantum Hall effect, interband optical transmittance, and photoluminescence. Heavy effective masses of 0.07m0 were determined in 5- and 10-nm-wide quantum wells, which were 70% larger than the bulk bandedge mass, 0.041m0. Sheet carrier concentration in the quantum wells was as high as 1 x 1012 cm-2
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1997; 4 p; Narrow gap semiconductor meeting; Shanghai (China); 14-18 Apr 1997; CONF-9704111--2; CONTRACT AC04-94AL85000; Also available from OSTI as DE97007596; NTIS; US Govt. Printing Office Dep
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