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Fleetwood, D.M.; Johnson, M.J.
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE, Washington, DC (United States)1997
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE, Washington, DC (United States)1997
AbstractAbstract
[en] A delayed increase in 1/f noise is observed for pMOS transistors showing latent radiation-induced interface-trap buildup. The latent interface traps and increased noise appear to result from the same thermally activated process, likely involving hydrogen
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1997; 5 p; 34. IEEE nuclear and space radiation effects conference; Snowmass, CO (United States); 21-25 Jul 1997; CONF-970711--13; CONTRACT AC04-94AL85000; Also available from OSTI as DE97003212; NTIS; US Govt. Printing Office Dep
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