[en] Study of γ-quanta and high energy electrons irradiation influence on structural properties of sulfides of lead and cadmium is carried out. Research objects were the doped and non-doped thin films of Pb S and CdS received by the method of molecular-beam epitaxy and by usual vacuum evaporation on dielectric substances. There is γ-radiolysis of Pb, Cd and S crystals' surface in result of γ-irradiation with dose ∼10⁸ R. Yield of these elements on surface have been stimulated by radiation diffusion accelerated by ionized radiation field. It is revealed, that γ-quanta and electron (E=1-4 MeV) irradiation conduces to formation of new phase in Pb S and CdS (compounds of sup-stoichiometric Pb, Cd and S with oxygen) and to improving of crystal structure of Pb S and CdS films. There is more great effect for films preliminary doped by indium and it is cased by radiation-stimulated diffusion and electric activation of impurity of In during irradiation