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Myers, S.M.; Han, J.; Headley, T.J.; Hills, C.R.; Petersen, G.A.; Seager, C.H.; Wampler, W.R.
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE Office of Energy Research, Washington, DC (United States)1998
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE Office of Energy Research, Washington, DC (United States)1998
AbstractAbstract
[en] Hydrogen was ion-implanted into GaN at concentrations ranging over two orders of magnitude, and its states and microstructural effects during annealing up to 1000 C were characterized by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared spectroscopy of H vibrational modes
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1998; 19 p; 11. international conference on ion beam modification of materials; Amsterdam (Netherlands); 31 Aug - 4 Sep 1998; CONF-980825--; CONTRACT AC04-94AL85000; ALSO AVAILABLE FROM OSTI AS DE98006166; NTIS; US GOVT. PRINTING OFFICE DEP
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