Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.02 seconds
Schoene, H.; Walsh, D.S.; Sexton, F.W.; Doyle, B.L.; Aurand, J.F.; Dodd, P.E.; Flores, R.S.; Wing, N.
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE Office of Financial Management and Controller, Washington, DC (United States)1998
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE Office of Financial Management and Controller, Washington, DC (United States)1998
AbstractAbstract
[en] The entire current transient induced by single 12 MeV Carbon ions was measured at a 5GHz analog bandwidth. A focused ion micro-beam was used to acquire multiple single ion transients at multiple locations of a single CMOS transistor. The current transients reveal clear and discernible contributions of drift and diffusive charge collection. Transients measured for drain and off-drain ion strikes compare well to 3D DAVINCI calculations. Estimates are presented for the drift assisted funneling charge collection depth
Source
1998; 7 p; IEEE nuclear and space radiation effects conference; Newport Beach, CA (United States); 20-24 Jul 1998; CONF-980705--; CONTRACT AC04-94AL85000; ALSO AVAILABLE FROM OSTI AS DE98007169; NTIS; US GOVT. PRINTING OFFICE DEP
Record Type
Report
Literature Type
Conference; Numerical Data
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue