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Dodd, P.E.; Shaneyfelt, M.R.; Sexton, F.W.; Hash, G.L.; Winokur, P.S.; Musseau, O.; Leray, J.L.
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE, Washington, DC (United States)1998
Sandia National Labs., Albuquerque, NM (United States). Funding organisation: USDOE, Washington, DC (United States)1998
AbstractAbstract
[en] The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 microm
Source
Mar 1998; 6 p; IEEE nuclear and space radiation effects conference; Newport Beach, CA (United States); 20-24 Jul 1998; CONF-980705--; CONTRACT AC04-94AL85000; ALSO AVAILABLE FROM OSTI AS DE98005028; NTIS; INIS; US GOVT. PRINTING OFFICE DEP
Record Type
Report
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Conference; Numerical Data
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