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Pandey, S.U.; Middelkamp, P.; Li, Z.; Eremin, V.
Brookhaven National Lab., Upton, NY (United States). Funding organisation: USDOE Office of Energy Research, Washington, DC (United States)1998
Brookhaven National Lab., Upton, NY (United States). Funding organisation: USDOE Office of Energy Research, Washington, DC (United States)1998
AbstractAbstract
[en] A new experimental apparatus to perform I-DLTS measurements is presented. The method is shown to be faster and more sensitive than traditional double boxcar I-DLTS systems. A novel analysis technique utilizing multiple exponential fits to the I-DLTS signal from a highly neutron irradiated silicon sample is presented with a discussion of the results. It is shown that the new method has better resolution and can deconvolute overlapping peaks more accurately than previous methods
Original Title
Current-Deep Level Transient Spectroscopy
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Feb 1998; 13 p; 2. international conference on radiation effects on semiconductor materials, detectors and devices; Florence (Italy); 4-6 Mar 1998; CONF-980355--; CONTRACT AC02-76CH00016; ALSO AVAILABLE FROM OSTI AS DE98004440; NTIS; INIS; US GOVT. PRINTING OFFICE DEP
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Report
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