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Varichenko, V.S.; Yavid, V.Yu.; Yakubenya, S.N.; Didyk, A.Yu.; Zajtsev, A.M.
Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Dubna (Russian Federation)2000
Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Dubna (Russian Federation)2000
AbstractAbstract
[en] Temperature changes versus lifetime of nonequilibrium charge carriers t in n-type silicon layers implanted with 92 MeV boron ions have been investigated. It was established that t is determined by recombination centres localized in strongly compensated regions of accumulated defects produced during the implantation process and subsequent annealing. It was shown that dominant recombination centres are concerned with multivacancy complexes and produce energy levels Ec - (0.12 - 0.18)eV in a silicon band gap. (author)
Original Title
Rekombinatsiya neravnovesnykh nositelej zaryada v kremnii, implantirovannom ionami bora s ehnergiej 92 MehV
Source
2000; 8 p; 19 refs., 1 fig. Submitted to the organizing committee of the conference 'Radiation Physics of Solids', Sevastopol', July 2000
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