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Nakayama, M.; Kimura, N.; Aoki, H.; Komatsubara, T.; Uji, S.
Proceedings of the 4th international symposium on advanced physical fields. Quantum phenomena in advanced materials at high magnetic fields1999
Proceedings of the 4th international symposium on advanced physical fields. Quantum phenomena in advanced materials at high magnetic fields1999
AbstractAbstract
[en] We have succeeded in growing a single crystal of La3Pd20Ge6 which is the reference material to Ce3Pd20Ge6. The de Haas-van Alphen effect measurements have been carried out in La3Pd20Ge6 to investigate the difference between the electronic structures of the two compounds. The seven main branches are observed and the angular dependences of these branches are found to be very similar to those in Ce3Pd20Ge6. On the other hand, the effective masses are in the range from 0.2 to 0.9 m0 and are 0.16 - 0.8 times as small as those of Ce3Pd20Ge6. (author)
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Kido, Giyuu (ed.) (National Research Inst. for Metals, Tsukuba, Ibaraki (Japan)); 344 p; 1999; p. 157-159; APF-4: 4. international symposium on advanced physical fields; Tsukuba, Ibaraki (Japan); 9-12 Mar 1999; Available from National Research Institute for Metals, Tsukuba, Ibaraki 305-0003, Japan; 11 refs., 3 figs., 1 tab.
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