[en] With the growing availability of ASICs for low-noise multichannel readout, there is increasing interest in extracting three-dimensional position information from semiconductor gamma ray spectrometers fabricated with segmented electrodes. This presentation will review the basic principles of charge induction due to the motion of charge carriers in arbitrary geometry, and demonstrate how the relative shapes and amplitudes of induced signals can be used to deduce the original position of the charge carriers. Examples will be shown of work at the University of Michigan in which independent pulse height spectra have been recorded from over 2000 separate voxels in a 1 cm 3 sample of CdZnTe. Position-resolved spectra have also been obtained from CdTe and HgI₂ room-temperature semiconductor detectors. Work at other laboratories with cooled germanium detectors has demonstrated the feasibility of three-dimensional position sensing, using pulse shape analysis and the transient 'spectator electrode' signals induced on multiple electrodes. One application of these approaches is to compensate for nonuniformity in the response of spectrometers throughout their volume. We will show the improvements that can be made in room temperature semiconductor spectrometers by digital correction and recombination of the multiple signals. Another application is using the position and energy information to reconstruct the direction of the incident gamma ray. Conventional 'Compton cameras' make use of separate detector elements to provide this information. In principle, the same process can be carried out in a single detector if each gamma ray interaction can be adequately resolved in energy and position. Progress in this direction will be reviewed. (author)