[en] When GaAs-Si and GaAs-AlGaAs heterostructures are exposed to gamma quanta, radiation stimulated ordering is observed. But the gettering efficiency in such systems falls roughly at the layer widths more than 1 μm. That is why the search is relevant for effective methods of radiation resistance improvement of the materials which would expect point radiation defects to be gettered not only by defect boundary, but also by point gettering centers in the active layer volume. S.i.GaAs-s.i.Al_xGa_1-As-nGaAs:Te heterostructures are presented with epitaxial layers (doped with Yb or undoped), obtained by means of LPE. Electron concentration in nGaAs was equal to (1-3).10¹⁸ cm^-3 , width 1-3 μm. The samples were exposed to gamma quanta ⁶⁰Co by the doses of 10⁵ -10⁷ Rad. Investigations of irradiated samples by means of low-temperature photoluminescence (4.2 K) have shown that a considerable decrease of exciton half-width in the boundary spectra of nGaAs:Te:Yb epitaxial layer photolithography in comparison with the nGaAs:Te layer spectra, is caused by the background impurity gettering which happens on the s.i.Al_xGa_1-xAs-nGaAs heteroboundaries as well as on the deformed regions in the epitaxial layer volume. Formation of such regions is caused by the difference between covalent radiuses of Yb atoms and GaAs lattice atoms. Maximum effect of radiation stimulated gettering of dopants in nGaAs epitaxial layers is observed at Yb concentration being equal to (10^-4-10^-5 ) atomic fractions in a solution-melt. It is determined that the deformed regions in epitaxial layer volume and heteroboundaries could be the efficient drains for point radiation defects which form under radiation exposure. The investigations carried out showed that the doping of an epitaxial layers by rare-earth impurities is the way for a considerable improvement of technological possibilities of forming radiation resistant III-V materials. (author)