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AbstractAbstract
[en] Silicon strip detectors have been fabricated using ion-implantation as well as conventional surface barrier technology. Their relative performance at room temperature for alpha particle response, I-V characteristics and interstrip resistance are compared and discussed. (author)
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Chatterjee, A.; John, Bency (Nuclear Physics Div., Bhabha Atomic Research Centre, Mumbai (India)) (eds.); Department of Atomic Energy, Mumbai (India); 505 p; Dec 1999; p. 360-361; DAE symposium on nuclear physics; Chandigarh (India); 27-31 Dec 1999; 2 figs., 2 tabs.
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Book
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Conference
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