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[en] Self-organised InGaAs quantum dots were grown on (001) GaAs substrates and covered with two different types of cap layers grown at significantly different temperatures. In order to determine quantum dot emission energy and dot size distribution, photoluminescence and transmission electron microscopy studies were carried out on such samples. Simple theoretical model neglecting effect of interdiffusion allowed for correlation between quantum dot size and photoluminescence emission energy only in the case of dots covered by cap layers grown at the lower temperature. For dots covered by layers grown at the higher temperature such correlation was possible only when strong interdiffusion was assumed. (author)
Source
Warsaw University of Technology, Faculty of Materials Science, Warsaw (Poland); 447 p; ISBN 83-907892-4-8; 
; 1999; p. 171-174; 10. Conference on Electron Microscopy of Solids; Warsaw-Serock (Poland); 20-23 Sep 1999; Available at Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw,Poland; 3 refs, 3 figs
; 1999; p. 171-174; 10. Conference on Electron Microscopy of Solids; Warsaw-Serock (Poland); 20-23 Sep 1999; Available at Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-910 Warsaw,Poland; 3 refs, 3 figs