[en] With the purpose to study the interaction of dot defects formed in the process of ionic implantation with microdefects in silicon by electron microscopy, researches of dislocation-free silicon after ionic implantation of arsenic are carried out. Alloyed crystals were exposed to thermal treatment at 650 and 850 degree C. The received results testify to that, in the course of ionic implantation and following thermal treatment, the process of growth and transformation of microdefects against the background of disintegration of a solid solution silicon-arsenic occurs