Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.015 seconds
AbstractAbstract
[en] A computer simulation based on numerical study of crystal is discussed in detail. How computer simulation naturally allows for a quantitative analysis of the effect of surface kinetics on epitaxial growth of crystal. Some general features of two atomistic simulation methods, namely the Molecular Dynamic pointed out. We focussed on (MD) techniques, which is direct real-time microscopic dynamic simulation of (MBE) growth, which actually solve the differential Newton's equation of motion for all the atoms participating in growth. (author)
Source
Khan, M.A.; Hussain, K.; Khan, A.Q. (eds.); Doctor A.Q. Khan Research Labs., Rawalpindi (Pakistan); 581 p; ISBN 969-8122-11-7;
; 1999; p. 397-400; 6. International Symposium on Advanced Materials; Islamabad (Pakistan); 19-23 Sep 1999

Record Type
Book
Literature Type
Conference
Country of publication
Reference NumberReference Number
Related RecordRelated Record
INIS VolumeINIS Volume
INIS IssueINIS Issue