[en] Thin films of the superconductor YBa₂Cu₃O₇ have been grown on Si(111)/CoSi₂/ZrO₂ structures by inverted cylindrical magnetron sputter deposition at 700 degrees C. The CoSi₂/ZrO₂ bilayer structure was formed simultaneously by annealing an amorphous CoZr alloy layer in O₂ at 650 degrees C. The amorphous alloy was formed by solid state reaction of crystalline Co and Zr under long anneals at a temperature below the crystallization temperature of the CoZr alloy. The bilayer formation gave a polycrystalline ZrO₂ and an epitaxial CoSi₂ layer aligned with the Si(111) substrate, with a channelling yield of 40%. YBa₂Cu₃O₇ films grown on this multilayered structure had a T_c of 81 K and a transition width, Delta T, of 3 K as measured by resistivity readings. (author)