[en] Paper deals with the investigation into the atomic hydrogen interaction with silicon thin polycrystalline films. The process of the atomic hydrogen effect occurs under low temperature in the neighbourhood of the room one resulting in the absence of self-alloying, in small-scale depth of transition layer, in high structure perfection, in simplicity and availability of the technique. One investigates the atomic hydrogen effect on the tunneling efficiency through thin semiconducting films. Feasibility of tunnel p-n transitions in the silicon base integral modification