[en] Effect of 1.1 MeV gamma irradiation has been studied on Au/n- Si:Pt and Au/n-Si:Pd Schottky barrier diodes. A comparison of the results from these two types of structures illustrate the influence of device processing on the type of defects formed by subsequent irradiation. Before irradiation the energy levels for Pt and Pd in n-type silicon have been observed at E_c-0.28 eV, E_c- 0.52 eV and E_c-0.22 eV respectively. After irradiation and annealing all the energy levels due to irradiation are disappeared except E_c-0.28 eV in Au/n-Si:Pt and E_c-0.22 eV in Au/n-Si:Pd Schottky diodes. (author)