[en] Intense pulsed heavy ion beams (PHIB) are expected to be applied to the implantation technology for semiconductor materials. In the application it is very important to purify the ion beam. To produce a pure PHIB a new type of pulsed power ion accelerator using bipolar pulse is proposed, which is called as ''bipolar pulse accelerator (BPA)''. As the first step of the development of BPA, a test system was constructed to confirm the principle of the acceleration. The system consists of an anode with an ion source of gas puff plasma gun, a B_r type magnetically insulated acceleration gap, and a drift tube. In the experiment the gas puff plasma gun generates a nitrogen ion flux of current density 50 A/cm². The ions are successfully accelerated in the gap by applying negative pulse of voltage 210 kV to the drift tube. The accelerated ions are detected by a shadow box and the divergence angles of r and θ directions of the beam were estimated to be 0.1 rad and 0.2 rad, respectively. (author)