[en] We have developed a high-resolution diffraction imaging method for determination of the complete three-dimensional rotational local lattice misorientation of crystalline samples. The method, called synchrotron area diffractometry, is based on recording double-crystal diffraction rocking scans in three mutually non-coplanar scattering planes with a two-dimensional area detector. The subsequent multiple-peak analysis of the rocking curve image series for all pixels and their backprojection to the wafer surface provides local misorientation angles (Euler angles) with spatial resolution up to micrometre range over the wafer surface. We applied this technique to determine the distribution of tilt and twist angles of the lattice misorientation of a macroscopic defect localized in a 6 inch semi-insulating GaAs(001) wafer