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AbstractAbstract
[en] This work describes the R and D work on radiation resistant silicon sensors for the ATLAS pixel detector: the technological choices and the design will be illustrated. Some sensor prototypes have been characterised and tested with unirradiated front-end electronics before and after high energy proton irradiation, showing that we can achieve the required radiation resistance to fluences of 1 x 1015 cm-2 using n+ on n sensors with the p-spray isolation technology
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6. international conference on advanced technology and particle physics; Como (Italy); 5-9 Oct 1998; S0920563299006179; Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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