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Barnaby, H.J.; Cirba, C.; Schrimpf, R.D.; Kosier, St.; Fouillat, P.; Montagner, X.
CEA Grenoble, Lab. d'Electronique et de Technologie de l'Informatique, LETI, 38 (France)1999
CEA Grenoble, Lab. d'Electronique et de Technologie de l'Informatique, LETI, 38 (France)1999
AbstractAbstract
[en] Radiation-induced oxide defects that degrade electrical characteristics of bipolar junction transistor (BJTs) can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation. (authors)
Original Title
Modelisation de la generation de defauts crees par irradiation dans les oxydes de transistors bipolaires: caracterisation par la methode ''diodes controlees par grille''
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Source
1999; [3 p.]; 5. European conference on radiation and its effects on components and systems; 5. congres europeen les radiations et leurs effets sur les composants et les systemes; Abbaye de Fontevraud (France); 13-17 Sep 1999; 10 refs.
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