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Hoffmann, A.; Charles, J.P.; Kerns, S.E.; Kerns, D.V. Jr.; Bardonnie, M. de la; Mialhe, P.
CEA Grenoble, Lab. d'Electronique et de Technologie de l'Informatique, LETI, 38 (France)1999
CEA Grenoble, Lab. d'Electronique et de Technologie de l'Informatique, LETI, 38 (France)1999
AbstractAbstract
[en] The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analysed at 3 fluences: 4,06*1010, 8,12*1010 and 1,22*1011 n/cm2 for a flux of 2,82*106 n/s*cm2 and using a custom software. Electrical parameter changes are attributed to bulk semi-conductor defects. Irradiation effects on passivation overlayers are evacuate using analysis of gate-channel junction electroluminescence. This study shows that even for low neutron fluences (1011 n/cm2), n-channel JFETs, characterized in direct conducting mode and submitted to neutron radiation, present a decrease in the reverse saturation current associated with recombination. (A.C.)
Original Title
Analyse electrique et optique des effets induits par des neutrons (30 MeV) pour de faibles fluences dans des JFETs
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Source
1999; [2 p.]; 5. European conference on radiation and its effects on components and systems; 5. congres europeen les radiations et leurs effets sur les composants et les systemes; Abbaye de Fontevraud (France); 13-17 Sep 1999; 10 refs.
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