[en] In the present study, single crystals of defect semiconductor In₂Te₅ were grown by the Bridgman technique. An investigation was made on the Hall effect, electrical conductivity and thermoelectric power of In₂Te₅ monocrystal in the temperature ranging from 200 to 500 K. The investigated samples were P-type conducting. The Hall coefficient yields a room-temperature carrier concentration of (7.7 x 10⁹ cm^-3). The bandgap was found to be (ΔE_g=0.993 eV). Hence, a combination of the electrical conductivity and Hall effect measurements enable us to study the influence of temperature on the Hall mobility (μ) and to discuss the scattering mechanism of the charge carriers, also the present investigation involves thermoelectric power measurements of In₂Te₅ single crystal: these measurements enable us to determine many physical parameters such as carriers mobilities, effective masses of free charge carriers (m_p*,m_n*), diffusion coefficients (D_p,D_n) and diffusion lengths as well as the relaxation time (τ_p,τ_n). (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)