Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.016 seconds
AbstractAbstract
[en] It is shown that oxygen dimers (two atoms of oxygen bonded with common silicon atom) play important role in processes of thermal and radiation defect formations in silicon. Dimer formation is the first stage of all processes connected with oxygen precipitations. Dimers are effective traps for intrinsic interstitial silicon atoms and complex IO2i is one of the main radiation defects in carbon-free silicon crystals grown by Czochralski method and irradiated at room temperature
Original Title
Mekhanizm formirovaniya i svojstva kislorodnykh dimerov v kremnii
Source
Olekhnovich, N.M. (ed.); Inst. of solid-state and semiconductors physics, National academy of sciences of Belarus, Minsk (Belarus); 606 p; ISBN 985-08-0572-2;
; Sep 2003; p. 269-278; 30 refs., 1 fig.

Record Type
Book
Country of publication
ABSORPTION SPECTRA, CARBON ADDITIONS, CRYSTAL DEFECTS, CZOCHRALSKI METHOD, DIMERS, ELECTRON BEAMS, GAMMA RADIATION, IMPURITIES, OXYGEN 18, OXYGEN ADDITIONS, OXYGEN COMPLEXES, PHYSICAL RADIATION EFFECTS, SILICON, TEMPERATURE RANGE 0000-0013 K, TEMPERATURE RANGE 0273-0400 K, TEMPERATURE RANGE 0400-1000 K
ALLOYS, BEAMS, COMPLEXES, CRYSTAL GROWTH METHODS, CRYSTAL STRUCTURE, ELECTROMAGNETIC RADIATION, ELEMENTS, EVEN-EVEN NUCLEI, IONIZING RADIATIONS, ISOTOPES, LEPTON BEAMS, LIGHT NUCLEI, NUCLEI, OXYGEN ISOTOPES, PARTICLE BEAMS, RADIATION EFFECTS, RADIATIONS, SEMIMETALS, SPECTRA, STABLE ISOTOPES, TEMPERATURE RANGE
Reference NumberReference Number
Related RecordRelated Record
INIS VolumeINIS Volume
INIS IssueINIS Issue