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[en] It was studied the differences in systems of optically active defects of cubic boron nitrides formed by electron irradiation with low energies (150- 300 keV) and high energies (4.5 MeV). The results of photoluminescence investigation at the temperature 6 K are presented. It was made an supposition about nature of observed radiation defects
Source
Olekhnovich, N.M. (ed.); Inst. of solid-state and semiconductors physics, National academy of sciences of Belarus, Minsk (Belarus); 606 p; ISBN 985-08-0572-2; 
; Sep 2003; p. 356-366; 13 refs., 6 figs.
; Sep 2003; p. 356-366; 13 refs., 6 figs.