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[en] The present work investigates the electronic properties of thin epitaxial silicon films and their suitability for microelectronic and photovoltaic applications. The films are grown by ion-assisted deposition (IAD), a molecular beam epitaxy (MBE) method that uses a small fraction of accelerated Si+-ions in the molecular beam, allowing for additional kinetic energy transfer to the substrate during low temperature epitaxy. (orig.)
Source
Berichte aus der Halbleitertechnik; 2003; 138 p; Shaker; Aachen (Germany); ISBN 3-8322-1807-6; 
; ISSN 0945-0785; ; Diss. (Dr.-Ing.)
; ISSN 0945-0785; ; Diss. (Dr.-Ing.)